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HN29W12811T-60 - 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

HN29W12811T-60_1873602.PDF Datasheet
 Full text search : 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

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HN29W12811T-60 128M AND type Flash Memory More than 8/029-sector (135/657/984-bit)
 Hitachi Semiconductor
AM29F080B-75SC Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
 Spansion, Inc.
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 SAMSUNG SEMICONDUCTOR CO. LTD.
K9K1G08U0M-YCB0 K9K1G08U0M-YIB0 128M x 8 Bit NAND Flash Memory
 Samsung Electronic
SAMSUNG[Samsung semiconductor]
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 SAMSUNG[Samsung semiconductor]
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 Winbond
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 Macronix International
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 MCNIX[Macronix International]
MX28F128J3 MX28F640J3 (MX28F128J3 - MX28F640J3) 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
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 Fujitsu, Ltd.
Fujitsu Component Limited.
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 FUJITSU[Fujitsu Media Devices Limited]
 
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HN29W12811T-60 zener HN29W12811T-60 data sheet ic HN29W12811T-60 ohm HN29W12811T-60 circuit board HN29W12811T-60 receptacle
 

 

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